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GAE HWANG LEE, XAVIER BULLIARD, SUNGYOUNG YUN,DONG-SEOK LEEM, KYUNG-BAE PARK, KWANG-HEE LEE,CHUL-JOON HEO, IN-SUN JUNG, JUNG-HWA KIM, YEONG SUK CHOI, SEON-JEONG LIM, AND YONG WAN JIN,
Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co., Ltd., 130 Samsung-ro,
Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803, South Korea
Reference: Optics Express Vol. 27, Issue 18, pp. 25410-25419 (2019) 

Abstract

  • In summary, a high-performing green-selective OPD that reached an EQE over 70% at an operating voltage of 3 V, while the dark current was only 6 e/s/m2.    
  • In addition, an important OPD device specification such as a high thermal stability was also confirmed. This level of performance is in many aspects comparable to that obtained with a Si photodiode.
  • Considering the dual function of the active organic layer as filter and absorber, simplifying the lensing process, it therefore appears that organic photodiode could be integrated in the next generation of image sensors, as an alternative to conventional Si-photodiode image sensor.

Materials & Devices

*Table2 reference: Optics Express Vol. 27, Issue 18, pp. 25410-25419 (2019)
*Figure reference: Optics Express Vol. 27, Issue 18, pp. 25410-25419 (2019)

CMOS Image Sensor, organic photodiodes, OPD, green-light-selective