Products

(1) High-refractive-index Substrate - HN series

 

The external efficiency of conventional bottom-emission OLED can be largely enhanced by using a high-refractive-index substrate because the waveguide mode in the organic layer can be out-coupled into the substrate. Then the light can be further out-coupled by attaching a microlens array film on the substrate. Finally, the enhancement ratio can reach more than 100%.
Ref 1: Reineke et al., Nature, 2009, 459, 234.    Ref 2: Saso et al., Optics express, 2009, Vol.17, No.9, 7562.

Products

High-n Substrate
(HN01)
High-n Substrate/ITO (HNI01) High-n Substrate/ Patterned ITO (HNIP01) 
 
 

Specification

High-n Substrate (HN01)
Item Specification Unit
Package 10 pcs/pack
Material Al2O3  
Diameter 100 ± 0.1 mm
Thickness 650 ± 15 um
Flat Length 30 ± 1 mm
C-plane (0001) Off-set Angle (M-axis) 0.2 ± 0.1 degree
Refractive Index @550nm 1.77  
Front Side Roughness ≤ 2 Å
Back Side Roughness 0.6 - 1.2 μm
High-n Substrate / ITO (HNI01)
Item Specification Unit
Package 10 pcs/pack
ITO Thickness 1600~2200 Å
ITO Resistance 10~25 Ω/sq
ITO Transparency > 82 (at 550 nm) %
Substrate Refractive Index @550nm 1.77  
Diameter 100 ± 0.1 mm
Substrate Thickness   (HN01) 650 ± 15 um
High-n Substrate / Patterned ITO (HNIP01)
Item Specification Unit
Package 10 pcs/pack
ITO Thickness 1600~2200 Å
ITO Resistance 10~25 Ω/sq
ITO Transparency > 82 (at 550 nm) %
Substrate Refractive Index @550nm 1.77  
Diameter 100 ± 0.1 mm
Substrate Thickness   (HN01) 650 ± 15 um
ITO Pattern Customer Design  
 

(2) High-refractive-index Patterned Substrate - HNPS series

Two-unit all-phosphorescent white OLED 

Optical enhancement factor for angular distribution pattern Light extraction structure
None BLES Enhance-ment ratio
Designed for High-n MLA 0.91 1.97 + 116%
Typical 1.00 1.78 + 78%

Ref 1: Highly Efficient White OLEDs with over 100 lm/W for General Lighting. Panasonic Corporation, Eco Solutions Company, Kadoma, Osaka, Japan. 916 ● SID 2013 DIGEST

Item Specification Unit
Luminance 1,000 cd/m2
Efficacy 110 lm/W
External quantum efficiency (Estimated LEE) 99% (>49%)
Voltage 5.6 V
Estimated LT50 > 100,000 h
CRI 81
Color coordinates (0.48 , 0.42)
CCT 2,600 K
Panel area 25 cm2

Device result

Substrate   @1000nits CIE (x,y) Ra V (V) CE (cd/A) PE (lm/W)
Glass / ITO (0.37 , 0.41) 88.7 7.5 39.1 16.4
High-n Patterned Substrate / ITO (0.40 , 0.40) 88.9 7.0 76.7 (+96%) 34.4 (+110%)

The efficiency of conventional bottom-emission OLED can be largely enhanced by using a high-refractive-index patterned substrate, because the waveguide mode in the organic layer can be out-coupled into the high-n substrate. Then the light can be further out-coupled by pre-patterned microlens without attaching a conventional plastic microlens-array film. In our previous test of white OLED, the enhancement ratio of PE (lm/W) can reach 110%, similar to the result in Panasonic paper. 

Products

HIGH-N PATTERNED SUBSTRATE (HNPS01)


HIGH-N PATTERNED SUBSTRATE / ITO (HNPSI01)


HIGH-N PATTERNED SUBSTRATE / PATTERNED ITO (HNPSIP01)

 

Specification

High-n Patterned Substrate (HNPS01)
Item Specification Unit
Package 10 pcs/pack
Substrate material Al2O3  
Diameter 100 ± 0.1 mm
Thickness 650 ± 15 um
Refractive Index @550nm 1.77  
Lens pitch 3.0 ± 0.1 um
Lens width 2.8 ± 0.1 um
Lens height 1.8 ± 0.1 um
Polished side Roughness ≤ 2 Å
High-n Patterned Substrate / ITO (HNPSI01)
Item Specification Unit
Package 10 pcs/pack
ITO Thickness 1600~2200 Å
ITO Resistance 10~25 Ω/sq
ITO Transparency > 82 (at 550 nm) %
Substrate material Al2O3  
Diameter 100 ± 0.1 mm
Thickness 650 ± 15 um
Refractive Index @550nm 1.77  
Lens pitch 3.0 ± 0.1 um
Lens width 2.8 ± 0.1 um
Lens height 1.8 ± 0.1 um
High-n Patterned Substrate / Patterned ITO (HNPSIP01)
Item Specification Unit
Package 10 pcs/pack
ITO Thickness 1600~2200 Å
ITO Resistance 10~25 Ω/sq
ITO Transparency > 82 (at 550 nm) %
ITO Pattern Customer Design  
Substrate material Al2O3  
Diameter 100 ± 0.1 mm
Thickness 650 ± 15 um
Refractive Index @550nm 1.77  
Lens pitch 3.0 ± 0.1 um
Lens width 2.8 ± 0.1 um
Lens height 1.8 ± 0.1 um